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| Composite Transistors UP03383 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm For digital circuits 5 (0.30) 4 0.20 -0.02 +0.05 0.100.02 1.200.05 * Two elements incorporated into one package (Transistors with built-in resistor) * Reduction of the mounting area and assembly cost by one half 1 1.000.05 1.600.05 I Basic Part Number of Element * UNR1213 (UN1213) + UNR111F (UN111F) Display at No.1 lead 0.550.05 5 (0.20) 2 3 (0.50) (0.50) 5 (0.20) I Features 1.600.05 I Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Total Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating 50 50 100 -50 -50 -100 125 125 -55 to +125 Unit V V mA V V mA mW C C Tr1 R2 1 2 1: Emitter (Tr1) 2: Base (Tr1) 3: Emitter (Tr2) 0 to 0.02 4: Collector (Tr2) 5: Collector (Tr1) + Base (Tr2) SSMini5-F2 Package Marking Symbol: BZ Internal Connection 5 R1 Tr2 R1 R2 3 4 I Electrical Characteristics Ta = 25C 3C * Tr1 Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Symbol VCBO VCEO ICBO ICEO Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage High-level output voltage Low-level output voltage Input resistance Resistance ratio Gain bandwidth product IEBO hFE VCE(sat) VOH VOL R1 R1 / R2 fT VCB = 10 V, IE = -2 mA, f = 200 MHz Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 3.5 V, RL = 1 k -30% 0.8 47 1.0 150 4.9 0.2 +30% 1.2 MHz 80 0.25 V V V k Min 50 50 0.1 0.5 0.1 mA Typ Max Unit V V A Note) The part number in the parenthesis shows conventional part number. Publication date: May 2002 SJJ00255AED 0.10 max 1 UP03383 I Electrical Characteristics (continued) Ta = 25C 3C * Tr2 Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Symbol VCBO VCEO ICBO ICEO Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage High-level output voltage Low-level output voltage Input resistance Resistance ratio Gain bandwidth product IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = -10 V, IE = 1 mA, f = 200 MHz Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k -30% 4.7 0.47 80 MHz -4.9 - 0.2 +30% 30 - 0.25 V V V k Min -50 -50 - 0.1 - 0.5 -1.0 mA Typ Max Unit V V A Common characteristics chart PT T a 150 Total power dissipation PT (mW) 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Characteristics chart of Tr1 IC VCE IB = 1.0 mA 0.9 mA 0.8 mA 120 VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) Ta = 25C 10 IC / IB = 10 320 VCE = 10 V 280 hFE IC 140 Collector current IC (mA) 100 80 60 40 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA Forward current transfer ratio hFE Ta = 75C 25C 240 200 160 -25C 120 80 40 1 0.2 mA 0.1 Ta = 75C -25C 25C 0.1 mA 20 0 0 2 4 6 8 10 12 0.01 0.1 1 10 100 0 0.1 1 10 100 1 000 Collector to emitter voltage VCE (V) Collector current IC (mA) SJJ00255AED Collector current IC (mA) 2 UP03383 Cob VCB 10 100 IO VIN VO = 5 V Ta = 25C VIN IO 100 VO = 0.2 V Ta = 25C Collector output capacitance Cob (pF) f = 1 MHz Ta = 25C Output current IO (mA) 10 Input voltage VIN (V) 0 2 4 6 8 10 12 10 1 1 1 0 5 10 15 20 25 30 35 40 0.1 0.1 0.1 1 10 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics chart of Tr2 IC VCE Collector to emitter saturation voltage VCE(sat) (V) -140 -120 IB = -1.0 mA Ta = 25C - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0 -2 -4 -6 -8 -10 -12 -1 VCE(sat) IC IC / IB = 10 hFE IC -200 -180 Ta = 75C VCE = -10 V -100 -80 -60 -40 -20 0 Forward current transfer ratio hFE Collector current IC (mA) -160 -140 -120 -100 -80 -60 -40 -20 25C -25C - 0.1 Ta = 75C -25C 25C - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB 10 IO VIN -100 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C Collector output capacitance Cob (pF) f = 1 MHz Ta = 25C Output current IO (mA) -10 Input voltage VIN (V) -1 -1.2 -1.4 -1.6 -10 -1 -1 1 0 -5 -10 -15 -20 -25 -30 -35 -40 - 0.1 - 0.4 - 0.6 - 0.8 - 0.1 -1 -10 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJJ00255AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be ex-ported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 MAY |
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